w e w =date code e =specific device code ESDA6V1W5 transient voltage suppressors for esd protection description: the ESDA6V1W5 array is 4 -line esd transient voltage suppressor which provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge (esd). these devices clamp the voltage just above the logic level supply for positive transient, and to a diode drop below ground for negative transients. the ESDA6V1W5 safely dissipates esd strikes of 20 kv, exceeding the maximum requirement of the iec 61000-4-2 international standard. using the milstd-883 (method 3015) specification for human body model (hbm) esd, the device provides protection for contact discharges to greater than 20kv. the ESDA6V1W5 is available in a sot-3 5 3 package with working voltages of 5 volt. specification features: z working peak reverse voltage: 5 v z low leakage current: <1ua@3v z high esd protection level: >20kv per hbm z iec61000C4C2 level 4 esd protection z iec61000C4C4 level 4 eft protection z f our separate unidirectional configurations mechanical characteristics z void free, transfer-molded, thermosetting plastic case z corrosion resistant finish, easily solderable z small packaging applications z cell phone handsets and accessories z personal digital assistants (pda ? s) z notebooks, desktops, and servers z portable instrumentation order information part number package shipping ESDA6V1W5-5/tr sot-353 3000 tape & reel sot f 3 5 3 5 4 1 2 3 marking diagram pin configuration 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum rating rating symbol value units peak pulse power(t p =8/20us) p pp 300 w maximum peak pulse current(t p =8/20us) i pp 16 a esd per iec 61000-4-2 (air) esd per iec 61000-4-2 (contact) v pp +/-20 +/-20 kv maximum lead temperature for soldering during 10s t l 260 c storage temperature range t stg -55 to+150 c operating temperature range t op -55 to+150 c electrical parameter symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm i t test current v br breakdown voltage @ i t i f forward current v f forward voltage @ i f v i v c v br v r w m i f v f i r i pp ESDA6V1W5 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t=25 ? , device for 5.0v working peak reverse voltage) conditions minimum typical maximum unit i r v rwm =5v 0.5 ua v f i f = -10ma -0.4 -0.8 -1.25 v v br i t =1ma 6.1 6.6 7.2 v i pp =1a, t p = 8/20us, note1 9.8 v v c i pp = 16 a, t p = 8/20us, note1 12.5 v c pin1 to 2 v r = 0v, f = 1mhz 50 pf . note1: surge current waveform per figure 1. typical characteristics figure 1. pulse waveform t, time ( s) 30 15 10 5 0 percent of i pp 25 20 90 80 70 60 50 40 30 20 10 0 100 110 waveform parameters t r = 8 s t d = 20 s t d = i pp /2 c ? t 0 10 20 30 40 50 60 70 80 90 100 110 0 25 50 75 100 125 150 ambient temperature - t a ( o c) % of rated power or i pp figure 2. power derating curve 0.01 0.1 1 10 0.1 1 10 100 1000 pulse duration - tp ( p s) peak pulse power - p pp (kw) non-repetitive peak pulse power vs. pulse time 20 30 40 50 6 1 0 012345 reverse voltage - v r (v) capacitance - c j (pf) junction capacitance vs. reverse voltage figure 3. figure 4. ESDA6V1W5 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package mechanical data sot-353 min max min max a 0.900 1.100 0.035 0.043 a1 0.000 0.100 0.000 0.004 a2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.080 0.150 0.003 0.006 d 2.000 2.200 0.079 0.087 e 1.150 1.350 0.045 0.053 e1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 l l1 0.260 0.460 0.010 0.018 0 8 0 8 0.525 ref 0.021 ref symbol dimensions in millimeters dimensions in inches 0.650 typ 0.026 typ ESDA6V1W5 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
